Advanced Semiconductor, Inc. manufactures a line of RF power transistors that replace those from Motorola, Philips, and SGS Thomson. ASI offers bipolar RF power transistors, enhancement mode FET RF power transistors, and LDMOS FET RF power transistors covering the 1.0 MHz to 4.2 GHz frequency spectrum with output power up to 600 Watts. RF power transistors are available in a variety of hermetic and non-hermetic packages including balanced configurations. Many of our designs for RF power transistors feature internal impedance matching networks for enhanced performance.
To find the desired ASI RF power transistor, click the appropriate application link below, or select a replacement transistor family by prefix from the Transistor Part Number Index on the left. For quick searches, enter a part number or part number prefix in the Part-Finder search box.
Application-Specific RF Power Transistors
Schema Application-Specific RF Power Transistors


12.5 Volt, Class AB Linear

28 Volt, Class AB Linear

50 Volt, Class AB Linear

Class AB Linear, Mosfet


12.5 Volt, Low Band

12.5 & 28 Volt, Mid Band

12.5 Volt, High-Band

28 Volt, High Band

175 MHz, Mosfet


FM Land Mobile

FM Base Station

Cellular Base Station

Military Communications

225 - 400 MHz, Mosfet

Pulsed Avionics

1025 - 1150 MHz, DME/TACAN Applications

1030 - 1090 MHz, IFF Applications

960 - 1215 MHz, JTIDS Applications

Pulsed Radar

400 - 500 MHz, UHF Radar

1200 - 1400 MHz, L-Band

CW Microwave

Common Base, Class C

Common Emitter, Class A Linear

Common Collector, Oscillators


108 MHz FM Broadcast

Television Band III

Television Band IV & V

Package Outline Drawings

Click here for drawings
Bookmark and Share
My Zimbio
> TopOfBlogs .sg   TopOfBlogs