Schema Application-Specific RF Power Transistors
Sunday, February 14, 2010
Advanced Semiconductor, Inc. manufactures a line of RF power transistors that replace those from Motorola, Philips, and SGS Thomson. ASI offers bipolar RF power transistors, enhancement mode FET RF power transistors, and LDMOS FET RF power transistors covering the 1.0 MHz to 4.2 GHz frequency spectrum with output power up to 600 Watts. RF power transistors are available in a variety of hermetic and non-hermetic packages including balanced configurations. Many of our designs for RF power transistors feature internal impedance matching networks for enhanced performance.
To find the desired ASI RF power transistor, click the appropriate application link below, or select a replacement transistor family by prefix from the Transistor Part Number Index on the left. For quick searches, enter a part number or part number prefix in the Part-Finder search box.
Application-Specific RF Power Transistors
HF
12.5 Volt, Class AB Linear
28 Volt, Class AB Linear
50 Volt, Class AB Linear
Class AB Linear, Mosfet
VHF
12.5 Volt, Low Band
12.5 & 28 Volt, Mid Band
12.5 Volt, High-Band
28 Volt, High Band
175 MHz, Mosfet
UHF
FM Land Mobile
FM Base Station
Cellular Base Station
Military Communications
225 - 400 MHz, Mosfet
Pulsed Avionics
1025 - 1150 MHz, DME/TACAN Applications
1030 - 1090 MHz, IFF Applications
960 - 1215 MHz, JTIDS Applications
Pulsed Radar
400 - 500 MHz, UHF Radar
1200 - 1400 MHz, L-Band
CW Microwave
Common Base, Class C
Common Emitter, Class A Linear
Common Collector, Oscillators
Broadcast
108 MHz FM Broadcast
Television Band III
Television Band IV & V
Package Outline Drawings
Click here for drawings
